Performance Investigation and Optimization of Perovskite/CIGS Tandem Solar Cell by Using SCAPS-1D Modeling and Simulation

Abstract

In the photovoltaic industry, perovskites that belong to the third generation are one of the most popular materials which give more promising results. The CH3NH3PbI3 (Methylammonium Lead Iodide) also known as MAPI is one of the famous material which gives higher performances. The research work was focused on modeling a multi-junction device with a perovskite top cell and second generation bottom cell. These two cells were modeled and simulated under AM1.5G illumination and the final model of the tandem cell was optimized by considering the thicknesses of the absorber layers which is key to the performance. A surface defect layer (SDL) which previously proved buried homojunction was created at the CdS/CIGS interface. The existence of this layer increases the recombination at the homojunction. Therefore altering the properties of this layer was supposed to reduce the recombinations at the interface. The defect densities of the CdS/SDL and SDL/CIGS interfaces were analyzed and interpreted for all the possible outcomes. According to results, this tandem model showed 30.95% power conversion efficiency (PCE) with 1.82 V open-circuit voltage and 20.86 mA/cm2 short circuit current at the 0.19–0.20 µm thickness of perovskite absorber. All the modelings and simulations were done by using the SCAPS-1D software.