Low - Cost ZnO - Based Ultraviolet-Infrared Dual-Band Detector Sensitized With PbS Quantum Dots

Abstract

A low-cost photoconductive dual-band detector based on a ZnO film sensitized with lead sulfide quantum dots (PbS-QDs) is reported. The UV response arises from the interband absorption of UV radiation by ZnO, and the IR response is due to the absorption in the PbS-QDs. The detector exhibits UV response from 200 to 400 nm with a peak responsivity of 4.0 × 105 V/W and detectivityD∗ of 5.5 × 1011 Jones at 370 nm at room temperature. The observed visible–near IR response is from 500 to 1400 nm with a responsivity of 5.4 × 105 V/W and D∗ of 7.3 × 1011 Jones at 700 nm operating at room temperature. By increasing the PbS-QD size, the IR response can extend up to 2.9 μm.

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Citation

Jayaweera, P.V.V., Pitigala, P.K.D.D.P., Shao, J.F., Tennakone, K., Perera, A.G.U., Jayaweera, P.M., & Baltrusaitis, J. (2013). Low - Cost ZnO - Based Ultraviolet-Infrared Dual-Band Detector Sensitized With PbS Quantum Dots. IEEE Transactions on Electron Devices, 57(10), 2756-2760.

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