Low - Cost ZnO - Based Ultraviolet-Infrared Dual-Band Detector Sensitized With PbS Quantum Dots

dc.contributor.authorJayaweera, P.V.V.
dc.contributor.authorPitigala, P.K.D.D.P.
dc.contributor.authorShao, J.F.
dc.contributor.authorTennakone, K.
dc.contributor.authorPerera, A.G.U.
dc.contributor.authorJayaweera, P.M.
dc.contributor.authorBaltrusaitis, J.
dc.date.accessioned2013-12-23T04:38:27Z
dc.date.available2013-12-23T04:38:27Z
dc.date.issued2013-12-23T04:38:27Z
dc.date.published2010-10
dc.description.abstractA low-cost photoconductive dual-band detector based on a ZnO film sensitized with lead sulfide quantum dots (PbS-QDs) is reported. The UV response arises from the interband absorption of UV radiation by ZnO, and the IR response is due to the absorption in the PbS-QDs. The detector exhibits UV response from 200 to 400 nm with a peak responsivity of 4.0 × 105 V/W and detectivityD∗ of 5.5 × 1011 Jones at 370 nm at room temperature. The observed visible–near IR response is from 500 to 1400 nm with a responsivity of 5.4 × 105 V/W and D∗ of 7.3 × 1011 Jones at 700 nm operating at room temperature. By increasing the PbS-QD size, the IR response can extend up to 2.9 μm.en_US
dc.identifier.citationJayaweera, P.V.V., Pitigala, P.K.D.D.P., Shao, J.F., Tennakone, K., Perera, A.G.U., Jayaweera, P.M., & Baltrusaitis, J. (2013). Low - Cost ZnO - Based Ultraviolet-Infrared Dual-Band Detector Sensitized With PbS Quantum Dots. IEEE Transactions on Electron Devices, 57(10), 2756-2760.
dc.identifier.issn0018-9383
dc.identifier.urihttp://dr.lib.sjp.ac.lk/handle/123456789/1358
dc.language.isoenen_US
dc.publisherIEEE Electron Devices Society
dc.subjectDual banden_US
dc.subjectlead sulfide quantum dots (PbS-QDs)en_US
dc.subjectlow costen_US
dc.subjectultraviolet–infrared (UV–IR)en_US
dc.subjectZnOen_US
dc.titleLow - Cost ZnO - Based Ultraviolet-Infrared Dual-Band Detector Sensitized With PbS Quantum Dotsen_US
dc.typeArticleen_US

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