Abstract:
In the photovoltaic industry, perovskites that
belong to the third generation are one of the most popular
materials which give more promising results. The CH3NH3PbI3
(Methylammonium Lead Iodide) also known as MAPI is one of
the famous material which gives higher performances. The
research work was focused on modeling a multi-junction device
with a perovskite top cell and second generation bottom cell.
These two cells were modeled and simulated under AM1.5G
illumination and the final model of the tandem cell was
optimized by considering the thicknesses of the absorber layers
which is key to the performance. A surface defect layer (SDL)
which previously proved buried homojunction was created at
the CdS/CIGS interface. The existence of this layer increases the
recombination at the homojunction. Therefore altering the
properties of this layer was supposed to reduce the
recombinations at the interface. The defect densities of the
CdS/SDL and SDL/CIGS interfaces were analyzed and
interpreted for all the possible outcomes. According to results,
this tandem model showed 30.95% power conversion efficiency
(PCE) with 1.82 V open-circuit voltage and 20.86 mA/cm2
short
circuit current at the 0.19–0.20 µm thickness of perovskite
absorber. All the modelings and simulations were done by using
the SCAPS-1D software.
