Abstract:
This is a numerical simulation study of a thin film hybrid organic-inorganic
perovskite solar cell with a p-i-n structure. The p-type semiconductor layer is an
organic hole transporting material (HTM) called Poly (3,4-
ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS). In this new
device structure, we have intentionally included a double intrinsic layer (i) of 3D
Methylammonium Lead Iodide (CH3NH3PbI3) (MAPI) and the 2D monolayer of
CH3NH3PbI3 to minimize the degradation of the device, and also embedded deep
and shallow defects in the 3D-MAPI layer. The n-type material, fullerene
derivative (6,6)-phenyl-C61-butyric acid methyl ester (PCBM) is used as an
organic electron transporting material (ETM). The solar cell performance has
changed after including defects in the 3D-MAPI since the defects can alter the
dark saturation current of the device. The simulation results show that the shallow
defects and deep defects of 3D-MAPI can alter the open-circuit voltage of the
perovskite solar cell model. The open-circuit voltage of the solar cell model
depends on the dark saturation current, which indicates how much recombination
is occurring in a semiconductor. The deep defects of 3D-MAPI should be
minimized to increase the cell performance since the high dark saturation current
decreases the open-circuit voltage of the solar cell. We have observed that
Shockley-Read-Hall recombination is the most predominant recombination
mechanism for the deep defects in the 3D-MAPI materials.
